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Transient Voltage Suppressor Diode DB107 series rectifier bridge 4-pin rectifier diode
Features
This series is UL listed under the Recognized Component Index, file number E142814
The plastic material used carries Underwriters Laboratory flammability recognition 94V-0
Surge overload ratings to 30 amperes
Ideal for printed circuit board application
High temperature soldering guaranteed 260 C /5 seconds at 5 lbs (2.3kg) tension
Mechanical Data
Case: Molded plastic
Terminals: Plated leads solderable per MIL-STD-202, Method 208
Polarity: Marked on body
Mounting Position: Any
Weight: 0.04 ounce, 0.34 grams (approx)
Maximum Ratings & Thermal Characteristics
Rating at 25 C ambient temperature unless otherwise specified, Resistive or Inductive load, 60 Hz. For Capacitive load derate current by 20%.
Parameter | Symbol | DB101 | DB202 | DB103 | DB104 | DB105 | DB106 | DB107 | unit |
Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum RMS bridge input voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
Maximum average forward rectified output current at TA=40 C | IF(AV) | 1.0 | A | ||||||
Peak forward surge current single sine-wave superimposed on rated load (JEDEC Method) | IFSM | 30 | A | ||||||
Rating for fusing ( t<8.3ms) | I t | 10 | A 2 sec | ||||||
Typical thermal resistance per element (1) | ReJA | 110 | C / W | ||||||
Typical junction capacitance per element (2) | C | 25.0 | pF | ||||||
Operating junction and storage temperature range | TJ, TSTG | -55 to + 150 | C |
Electrical Characteristics
Rating at 25 C ambient temperature unless otherwise specified. Resistive or Inductive load, 60Hz. For Capacitive load derate by 20 %.
Parameter | Symbol | DB101 | DB102 | DB103 | DB104 | DB105 | DB106 | DB107 | Unit |
Maximum instantaneous forward voltage drop per leg at 2.0A | VF | 1.1 | V | ||||||
Maximum DC reverse current at rated TA =25 C DC blocking voltage per element TA =125 C | IR |
10 500 |
μA |
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